Invention Grant
- Patent Title: Semiconductor substrate, semiconductor package structure and method of making the same
- Patent Title (中): 半导体衬底,半导体封装结构及其制造方法
-
Application No.: US14700060Application Date: 2015-04-29
-
Publication No.: US09373601B2Publication Date: 2016-06-21
- Inventor: Chih-Cheng Lee , Yuan Chang Su , Cheng-Lin Ho , Chung-Ming Wu , You-Lung Yen
- Applicant: Advanced Semiconductor Engineering, Inc.
- Applicant Address: TW Kaohsiung
- Assignee: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
- Current Assignee: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
- Current Assignee Address: TW Kaohsiung
- Agency: Foley & Lardner LLP
- Agent Cliff Z. Liu; Angela D. Murch
- Priority: CN201410234083 20140529
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L21/48 ; H01L21/768 ; H01L21/683 ; H01L21/56 ; H01L23/498 ; H01L23/31

Abstract:
The present disclosure relates to a semiconductor substrate, a semiconductor package structure, and methods for making the same. A method includes providing a substrate and a carrier layer. The substrate includes a first patterned metal layer, a second patterned metal layer spaced from the first patterned metal layer, and a dielectric layer disposed between the first patterned metal layer and the second patterned metal layer. The dielectric layer covers the second patterned metal layer. The dielectric layer defines first openings exposing the second patterned metal layer, and further defines a via opening extending from the first patterned metal layer to the second patterned metal layer. A conductive material is disposed in the via and electrically connects the first patterned metal layer to the second patterned metal layer. The carrier layer defines second openings exposing the second patterned metal layer.
Public/Granted literature
- US20150348931A1 SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR PACKAGE STRUCTURE AND METHOD OF MAKING THE SAME Public/Granted day:2015-12-03
Information query
IPC分类: