Invention Grant
US09373716B2 Impact ionization devices, and methods of forming impact ionization devices
有权
冲击电离装置及其形成冲击电离装置的方法
- Patent Title: Impact ionization devices, and methods of forming impact ionization devices
- Patent Title (中): 冲击电离装置及其形成冲击电离装置的方法
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Application No.: US14164590Application Date: 2014-01-27
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Publication No.: US09373716B2Publication Date: 2016-06-21
- Inventor: Venkatesan Ananthan
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: TraskBritt
- Main IPC: H01L29/788
- IPC: H01L29/788 ; H01L29/78 ; H01L29/739 ; H01L29/66
Abstract:
Impact ionization devices including vertical and recessed impact ionization metal oxide semiconductor field effect transistor (MOSFET) devices and methods of forming such devices are disclosed. The devices require lower threshold voltage than conventional MOSFET devices while maintaining a footprint equal to or less than conventional MOSFET devices.
Public/Granted literature
- US20140138766A1 IMPACT IONIZATION DEVICES, AND METHODS OF FORMING IMPACT IONIZATION DEVICES Public/Granted day:2014-05-22
Information query
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