公开(公告)号：US20150145044A1

公开(公告)日：2015-05-28

申请号：US14603223

申请日：2015-01-22

Applicant: Micron Technology, Inc.

Inventor： Sanh D. Tang ,  Venkatesan Ananthan

IPC: H01L27/105 ,  H01L29/78

CPC classification number: H01L27/1052 ,  H01L27/108 ,  H01L27/10802 ,  H01L29/7827 ,  H01L29/7841

Abstract: The invention includes floating body transistor constructions containing U-shaped semiconductor material slices. The U-shapes have a pair of prongs joined to a central portion. Each of the prongs contains a source/drain region of a pair of gatedly-coupled source/drain regions, and the floating bodies of the transistors are within the central portions. The semiconductor material slices can be between front gates and back gates. The floating body transistor constructions can be incorporated into memory arrays, which in turn can be incorporated into electronic systems. The invention also includes methods of forming floating body transistor constructions, and methods of incorporating floating body transistor constructions into memory arrays.

Abstract translation: 本发明包括含有U形半导体材料片的浮体晶体管结构。 U形有一对连接到中心部分的插脚。 每个插脚包含一对门控耦合的源极/漏极区域的源极/漏极区域，并且晶体管的浮体在中心部分内。 半导体材料切片可以位于前门和后门之间。 可以将浮体晶体管结构并入到存储器阵列中，这又可以并入到电子系统中。 本发明还包括形成浮体晶体管结构的方法，以及将浮体晶体管结构结合到存储器阵列中的方法。

公开(公告)号：US20130320440A1

公开(公告)日：2013-12-05

申请号：US13959339

申请日：2013-08-05

Applicant: Micron Technology, Inc.

Inventor： Sanh D. Tang ,  Venkatesan Ananthan

IPC: H01L29/78

CPC classification number: H01L27/1052 ,  H01L27/108 ,  H01L27/10802 ,  H01L29/7827 ,  H01L29/7841

Abstract: The invention includes floating body transistor constructions containing U-shaped semiconductor material slices. The U-shapes have a pair of prongs joined to a central portion. Each of the prongs contains a source/drain region of a pair of gatedly-coupled source/drain regions, and the floating bodies of the transistors are within the central portions. The semiconductor material slices can be between front gates and back gates. The floating body transistor constructions can be incorporated into memory arrays, which in turn can be incorporated into electronic systems. The invention also includes methods of forming floating body transistor constructions, and methods of incorporating floating body transistor constructions into memory arrays.

Abstract translation: 本发明包括含有U形半导体材料片的浮体晶体管结构。 U形有一对连接到中心部分的插脚。 每个插脚包含一对门控耦合的源极/漏极区域的源极/漏极区域，并且晶体管的浮体在中心部分内。 半导体材料切片可以位于前门和后门之间。 可以将浮体晶体管结构并入到存储器阵列中，这又可以并入到电子系统中。 本发明还包括形成浮体晶体管结构的方法，以及将浮体晶体管结构结合到存储器阵列中的方法。

公开(公告)号：US09373716B2

公开(公告)日：2016-06-21

申请号：US14164590

申请日：2014-01-27

Applicant: Micron Technology, Inc.

Inventor： Venkatesan Ananthan

IPC: H01L29/788 ,  H01L29/78 ,  H01L29/739 ,  H01L29/66

CPC classification number: H01L29/7827 ,  H01L29/66666 ,  H01L29/7391

Abstract: Impact ionization devices including vertical and recessed impact ionization metal oxide semiconductor field effect transistor (MOSFET) devices and methods of forming such devices are disclosed. The devices require lower threshold voltage than conventional MOSFET devices while maintaining a footprint equal to or less than conventional MOSFET devices.

Abstract translation: 公开了包括垂直和凹陷的冲击电离金属氧化物半导体场效应晶体管（MOSFET）器件的冲击电离装置及其形成方法。 器件需要比传统MOSFET器件更低的阈值电压，同时保持等于或小于传统MOSFET器件的占空比。

公开(公告)号：US08946815B2

公开(公告)日：2015-02-03

申请号：US13959339

申请日：2013-08-05

Applicant: Micron Technology, Inc.

Inventor： Sanh D. Tang ,  Venkatesan Ananthan

IPC: H01L29/772 ,  H01L29/78 ,  H01L27/108

CPC classification number: H01L27/1052 ,  H01L27/108 ,  H01L27/10802 ,  H01L29/7827 ,  H01L29/7841

Abstract: The invention includes floating body transistor constructions containing U-shaped semiconductor material slices. The U-shapes have a pair of prongs joined to a central portion. Each of the prongs contains a source/drain region of a pair of gatedly-coupled source/drain regions, and the floating bodies of the transistors are within the central portions. The semiconductor material slices can be between front gates and back gates. The floating body transistor constructions can be incorporated into memory arrays, which in turn can be incorporated into electronic systems. The invention also includes methods of forming floating body transistor constructions, and methods of incorporating floating body transistor constructions into memory arrays.

Abstract translation: 本发明包括含有U形半导体材料片的浮体晶体管结构。 U形有一对连接到中心部分的插脚。 每个插脚包含一对门控耦合的源极/漏极区域的源极/漏极区域，并且晶体管的浮体在中心部分内。 半导体材料切片可以位于前门和后门之间。 可以将浮体晶体管结构并入到存储器阵列中，这又可以并入到电子系统中。 本发明还包括形成浮体晶体管结构的方法，以及将浮体晶体管结构结合到存储器阵列中的方法。

公开(公告)号：US20140138766A1

公开(公告)日：2014-05-22

申请号：US14164590

申请日：2014-01-27

Applicant: Micron Technology, Inc.

Inventor： Venkatesan Ananthan

IPC: H01L29/78 ,  H01L29/66

CPC classification number: H01L29/7827 ,  H01L29/66666 ,  H01L29/7391

Abstract: Impact ionization devices including vertical and recessed impact ionization metal oxide semiconductor field effect transistor (MOSFET) devices and methods of forming such devices are disclosed. The devices require lower threshold voltage than conventional MOSFET devices while maintaining a footprint equal to or less than conventional MOSFET devices.

Abstract translation: 公开了包括垂直和凹陷的冲击电离金属氧化物半导体场效应晶体管（MOSFET）器件的冲击电离装置及其形成方法。 器件需要比传统MOSFET器件更低的阈值电压，同时保持等于或小于传统MOSFET器件的占空比。