Semiconductor device

Invention Grant

US09373719B2 Semiconductor device 有权

Title translation: 半导体器件

Please log in to see more content

Patent Title: Semiconductor device
Patent Title (中): 半导体器件
Application No.: US14027334

Application Date: 2013-09-16
Publication No.: US09373719B2

Publication Date: 2016-06-21
Inventor: Shih-Fang Hong , Chung-Yi Chiu
Applicant: UNITED MICROELECTRONICS CORP.
Applicant Address: TW Hsinchu
Assignee: UNITED MICROELECTRONICS CORP.
Current Assignee: UNITED MICROELECTRONICS CORP.
Current Assignee Address: TW Hsinchu
Agency: WPAT, PC
Agent Justin King
Main IPC: H01L29/78
IPC: H01L29/78 ; H01L29/66

Abstract:

A semiconductor device is provided. The semiconductor device includes an active fin region, at least a gate strip, and a dummy fin region. The active fin region comprises at least an active fin. The gate strip is formed on the active fin region and extending across the active fin. The dummy fin region, comprising a plurality of dummy fins, is formed on two sides of the active fin region, and the dummy fins are formed on two sides of the gate strip.

Abstract(Chinese):

提供半导体器件。半导体器件包括有源鳍片区域，至少栅极条和伪鳍片区域。活性鳍片区域至少包括活性鳍片。栅极条形成在有源鳍片区域上并延伸穿过有源鳍片。在活动鳍片区域的两侧形成有包括多个虚设翅片的虚拟鳍片区域，并且虚设翅片形成在栅极条的两侧。

Public/Granted literature

US20150076569A1 SEMICONDUCTOR DEVICE Public/Granted day:2015-03-19

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L29/00	专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件（H01L31/00至H01L47/00，H01L51/05优先；除半导体或其电极之外的零部件入H01L23/00；由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00）
H01L29/66	.按半导体器件的类型区分的
H01L29/68	..只能通过对一个不通有待整流、放大或切换的电流的电极供给电流或施加电位方可进行控制的（H01L29/96优先）
H01L29/76	...单极器件
H01L29/772	....场效应晶体管
H01L29/78	.....由绝缘栅产生场效应的