发明授权
US09376762B2 Weir for improved crystal growth in a continuous Czochralski process
有权
用于在连续的切克劳斯基(Czochralski)工艺中改善晶体生长的堰
- 专利标题: Weir for improved crystal growth in a continuous Czochralski process
- 专利标题(中): 用于在连续的切克劳斯基(Czochralski)工艺中改善晶体生长的堰
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申请号: US13689189申请日: 2012-11-29
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公开(公告)号: US09376762B2公开(公告)日: 2016-06-28
- 发明人: Tirumani N. Swaminathan
- 申请人: Solaicx, Inc.
- 申请人地址: US MO Maryland Heights
- 专利权人: Solaicx
- 当前专利权人: Solaicx
- 当前专利权人地址: US MO Maryland Heights
- 代理机构: Armstrong Teasdale LLP
- 主分类号: C30B15/12
- IPC分类号: C30B15/12 ; C30B15/00 ; C30B29/06
摘要:
An apparatus for growing ingots by the Czochralski method includes a growth chamber defining an enclosure configured to circulate a purge gas about the growing ingot and a crucible provided in the growth chamber configured to hold the molten silicon. A weir is supported in the crucible and is configured to separate the molten silicon into an inner growth region surrounding the melt/crystal interface from an outer region configured to receive the crystalline feedstock. The weir comprises at least one sidewall extending vertically and a cap extending substantially perpendicularly to the sidewall.