Invention Grant
- Patent Title: Integrated MRAM module
- Patent Title (中): 集成MRAM模块
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Application No.: US13721092Application Date: 2012-12-20
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Publication No.: US09378793B2Publication Date: 2016-06-28
- Inventor: Xiangyu Dong , Jung Pill Kim , Jungwon Suh
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agent Donald D. Min; Paul Holdaway
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C11/16

Abstract:
Systems and methods for integrated magnetoresistive random access memory (MRAM) modules. An integrated circuit includes a processor without a last level cache integrated on a first chip a MRAM module comprising a MRAM last level cache and a MRAM main memory integrated on a second chip, wherein the MRAM module is a unified structure fabricated as monolithic package or a plurality of packages. The second package further includes memory controller logic. A simplified interface structure is configured to couple the first and the second package. The MRAM module is designed for high speed, high data retention, aggressive prefetching between the MRAM last level cache and the MRAM main memory, improved page handling, and improved seal ability.
Public/Granted literature
- US20140177325A1 INTEGRATED MRAM MODULE Public/Granted day:2014-06-26
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