Invention Grant
- Patent Title: Bitline regulator for high speed flash memory system
- Patent Title (中): 用于高速闪存系统的位线调节器
-
Application No.: US14486673Application Date: 2014-09-15
-
Publication No.: US09378834B2Publication Date: 2016-06-28
- Inventor: Xiaozhou Qian , Yao Zhou , Bin Sheng , Jiaxu Peng , Yaohua Zhu
- Applicant: Silicon Storage Technology, Inc.
- Applicant Address: US CA San Jose
- Assignee: Silicon Storage Technology, Inc.
- Current Assignee: Silicon Storage Technology, Inc.
- Current Assignee Address: US CA San Jose
- Agency: DLA Piper LLP (US)
- Priority: CN201410429526 20140722
- Main IPC: G11C16/06
- IPC: G11C16/06 ; G11C16/24 ; G11C29/02 ; G11C29/28 ; G11C16/28 ; G11C29/12
Abstract:
A bitline regulator for use in a high speed flash memory system is disclosed. The bitline regulator is responsive to a set of trim bits that are generated by comparing the bias voltage of a bitline to a reference voltage.
Public/Granted literature
- US20160027519A1 Bitline Regulator For High Speed Flash Memory System Public/Granted day:2016-01-28
Information query
