Invention Grant
- Patent Title: Shunt resistor and method for manufacturing the same
- Patent Title (中): 分流电阻及其制造方法
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Application No.: US14102762Application Date: 2013-12-11
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Publication No.: US09378873B2Publication Date: 2016-06-28
- Inventor: Tadahiko Yoshioka , Koichi Hirasawa , Yoshinori Aruga
- Applicant: KOA CORPORATION
- Applicant Address: JP Ina-shi
- Assignee: KOA CORPORATION
- Current Assignee: KOA CORPORATION
- Current Assignee Address: JP Ina-shi
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Priority: JP2011-150691 20110707
- Main IPC: H01C1/148
- IPC: H01C1/148 ; H01C1/144 ; H01C13/00 ; H01C17/28

Abstract:
Provided is a shunt resistor, which controls an influence of skin effect by high frequency current. The shunt resistor has a rod-shaped resistance body (11), and a pair of main electrode (12), of another material from the resistance body, wherein end faces of the resistance body and the main electrode are bonded. The resistance body (11) has a hole (11a) going through in direction where main electrodes are disposed, or a high resistance part (11b) going through at its axis portion that is highly resistive than outer part, and low resistance part (11c) that is formed in outer of the high resistance part. It is preferable that outer circumference of the resistance body is circle-shaped. Since, current doesn't flow fundamentally in the through hole or the high resistance part, fluctuation band in the current pathway can be reduced. Therefore, change of resistance value by skin effect by high-frequency current can be reduced.
Public/Granted literature
- US20140097933A1 SHUNT RESISTOR AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2014-04-10
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