Invention Grant
- Patent Title: Method of preparing transition metal pnictide magnetocaloric material, transition metal pnictide magnetocaloric material, and device including the same
- Patent Title (中): 过渡金属催化剂磁热材料的制备方法,过渡金属催化剂磁热材料及其装置
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Application No.: US13780167Application Date: 2013-02-28
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Publication No.: US09378879B2Publication Date: 2016-06-28
- Inventor: Soon-jae Kwon , Tae-gon Kim , Kyung-han Ahn
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR
- Agency: Cantor Colburn LLP
- Priority: KR10-2012-0035108 20120404
- Main IPC: H01F1/01
- IPC: H01F1/01 ; C01B35/04

Abstract:
A method of preparing a boron-doped transition metal pnictide magnetocaloric material, the method including: contacting a transition metal halide; a pnictogen element, a pnictogen oxide, or a combination thereof; a boron-containing oxide; and a reducing metal to provide a mixture; and heat treating the mixture to prepare the boron-doped transition metal pnictide magnetocaloric material.
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