Electromigration-resistant lead-free solder interconnect structures

Invention Grant

US09379007B2 Electromigration-resistant lead-free solder interconnect structures 有权

Title translation: 防电镀无铅焊料互连结构

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Patent Title: Electromigration-resistant lead-free solder interconnect structures
Patent Title (中): 防电镀无铅焊料互连结构
Application No.: US13874509

Application Date: 2013-05-01
Publication No.: US09379007B2

Publication Date: 2016-06-28
Inventor: Charles L. Arvin , Kenneth Bird , Charles C. Goldsmith , Sung K. Kang , Minhua Lu , Clare J. McCarthy , Eric D. Perfecto , Srinivasa S. N. Reddy , Krystyna W. Semkow , Thomas A. Wassick
Applicant: GLOBALFOUNDRIES Inc.
Applicant Address: KY Ugland House
Assignee: GLOBALFOUNDRIES INC.
Current Assignee: GLOBALFOUNDRIES INC.
Current Assignee Address: KY Ugland House
Agency: Heslin Rothenberg Farley & Mesiti P.C.
Agent George Blasiak
Main IPC: H01L21/321
IPC: H01L21/321 ; H01L21/768 ; H01L23/00

Electromigration-resistant lead-free solder interconnect structures

Abstract:

Embodiments of the invention include a lead-free solder interconnect structure and methods for making a lead-free interconnect structure. The structure includes a semiconductor substrate having a last metal layer, a copper pedestal attached to the last metal layer, a barrier layer attached to the copper pedestal, a barrier protection layer attached to the barrier layer, and a lead-free solder layer contacting at least one side of the copper pedestal.

Abstract(Chinese):

本发明的实施例包括无铅焊料互连结构和用于制造无铅互连结构的方法。该结构包括具有最后金属层的半导体衬底，附着于最后金属层的铜基座，附着于铜基座的阻挡层，与阻挡层连接的阻挡保护层，以及与该阻挡层相接触的无铅焊料层铜底座的最小一侧。

Public/Granted literature

US20130252418A1 ELECTROMIGRATION-RESISTANT LEAD-FREE SOLDER INTERCONNECT STRUCTURES Public/Granted day:2013-09-26

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/31	.....在半导体材料上形成绝缘层的，例如用于掩膜的或应用光刻技术的（密封层入H01L21/56）；以及这些层的后处理；这些层的材料的选择
H01L21/3205	......非绝缘层的沉积，例如绝缘层上的导电层或电阻层；这些层的后处理（电极的制造入H01L21/28）
H01L21/321	.......后处理