发明授权
- 专利标题： Methods for depositing nickel films and for making nickel silicide and nickel germanide
- 专利标题（中）： 沉积镍膜和制造硅化镍和锗锗的方法
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申请号： US13592025申请日： 2012-08-22
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公开(公告)号： US09379011B2公开(公告)日： 2016-06-28
- 发明人: Viljami J. Pore , Suvi P. Haukka , Tom E. Blomberg , Eva E. Tois
- 申请人： Viljami J. Pore , Suvi P. Haukka , Tom E. Blomberg , Eva E. Tois
- 申请人地址： NL
- 专利权人： ASM INTERNATIONAL N.V.
- 当前专利权人： ASM INTERNATIONAL N.V.
- 当前专利权人地址： NL
- 代理机构： Knobbe, Martens, Olson & Bear LLP
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/768 ; H01L21/28 ; H01L29/66
摘要：
In one aspect, methods of silicidation and germanidation are provided. In some embodiments, methods for forming metal silicide can include forming a non-oxide interface, such as germanium or solid antimony, over exposed silicon regions of a substrate. Metal oxide is formed over the interface layer. Annealing and reducing causes metal from the metal oxide to react with the underlying silicon and form metal silicide. Additionally, metal germanide can be formed by reduction of metal oxide over germanium, whether or not any underlying silicon is also silicided. In other embodiments, nickel is deposited directly and an interface layer is not used. In another aspect, methods of depositing nickel thin films by vapor phase deposition processes are provided. In some embodiments, nickel thin films are deposited by ALD. Nickel thin films can be used directly in silicidation and germanidation processes.
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