Invention Grant
US09379022B2 Process for forming driver for normally on III-nitride transistors to get normally-off functionality
有权
用于形成正常III族氮化物晶体管的驱动器以获得常规功能的工艺
- Patent Title: Process for forming driver for normally on III-nitride transistors to get normally-off functionality
- Patent Title (中): 用于形成正常III族氮化物晶体管的驱动器以获得常规功能的工艺
-
Application No.: US14745749Application Date: 2015-06-22
-
Publication No.: US09379022B2Publication Date: 2016-06-28
- Inventor: Sameer Pendharkar , Naveen Tipirneni
- Applicant: Texas Instruments Incorporated
- Applicant Address: US TX Dallas
- Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee Address: US TX Dallas
- Agent Jacqueline J. Garner; Frank D. Cimino
- Main IPC: H01L21/8236
- IPC: H01L21/8236 ; H01L27/088 ; H01L21/8234 ; H01L21/8252 ; H01L21/8258 ; H01L27/06 ; H01L29/16 ; H01L29/20
Abstract:
A semiconductor device includes a depletion mode GaN FET and an integrated driver/cascode IC. The integrated driver/cascode IC includes an enhancement mode cascoded NMOS transistor which is connected in series to a source node of the GaN FET. The integrated driver/cascode IC further includes a driver circuit which conditions a gate input signal and provides a suitable digital waveform to a gate node of the cascoded NMOS transistor. The cascoded NMOS transistor and the driver circuit are formed on a same silicon substrate.
Public/Granted literature
- US20150287641A1 DRIVER FOR NORMALLY ON III-NITRIDE TRANSISTORS TO GET NORMALLY-OFF FUNCTIONALITY Public/Granted day:2015-10-08
Information query
IPC分类:
