Invention Grant
- Patent Title: Stable nickel silicide formation with fluorine incorporation and related IC structure
- Patent Title (中): 稳定的硅化镍形成与氟掺入和相关的IC结构
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Application No.: US14302585Application Date: 2014-06-12
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Publication No.: US09379207B2Publication Date: 2016-06-28
- Inventor: Nicolas L. Breil
- Applicant: GLOBALFOUNDRIES INC.
- Applicant Address: KY Grand Cayman
- Assignee: GlobalFoundries, Inc.
- Current Assignee: GlobalFoundries, Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Hoffman Warnick LLC
- Agent Yuanmin Cai
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L21/3065 ; H01L29/45 ; H01L21/285 ; H01L21/3205 ; H01L21/8238 ; H01L29/78 ; H01L21/268 ; H01L21/28 ; H01L29/417 ; H01L21/324
Abstract:
A method of forming a stable nickel silicide layer is provided. The method may include forming a nickel silicide layer on a substrate. A fluorine-rich nickel layer is formed over the nickel silicide layer. The fluorine-rich nickel layer is subjected to a process that drives the fluorine in the fluorine-rich nickel layer into the nickel silicide layer thereunder.
Public/Granted literature
- US20150364571A1 STABLE NICKEL SILICIDE FORMATION WITH FLUORINE INCORPORATION AND RELATED IC STRUCTURE Public/Granted day:2015-12-17
Information query
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