发明授权
- 专利标题: Silicon based charge neutralization systems
- 专利标题(中): 硅基电荷中和系统
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申请号: US14665994申请日: 2015-03-23
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公开(公告)号: US09380689B2公开(公告)日: 2016-06-28
- 发明人: Peter Gefter , Aleksey Klochkov
- 申请人: Illinois Tool Works Inc.
- 申请人地址: US IL Glenview
- 专利权人: ILLINOIS TOOL WORKS INC.
- 当前专利权人: ILLINOIS TOOL WORKS INC.
- 当前专利权人地址: US IL Glenview
- 代理机构: Uriarte Law
- 主分类号: H01T23/00
- IPC分类号: H01T23/00 ; H05F3/06 ; B08B7/00 ; B32B7/12 ; B32B15/08 ; B32B15/082 ; B32B15/085 ; B32B15/18 ; B32B17/10 ; B32B27/30 ; B32B27/32 ; H01L31/048
摘要:
An embodiment of the invention provides a method for low emission charge neutralization, comprising: generating a high frequency alternating current (AC) voltage; transmitting the high frequency AC voltage to at least one non-metallic emitter; wherein the at least one non-metallic emitter comprises at least 70% silicon by weight and less than 99.99% silicon by weight; wherein the at least one emitter comprises at least one treated surface section with a destroyed oxidation layer; and generating ions from the at least one non-metallic emitter in response to the high frequency AC voltage. Another embodiment of the invention provides an apparatus for low emission charge neutralization wherein the apparatus can perform the above-described operations.
公开/授权文献
- US20150282286A1 Silicon Based Charge Neutralization Systems 公开/授权日:2015-10-01
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