Invention Grant
- Patent Title: Gas-flow control method for plasma apparatus
- Patent Title (中): 等离子设备的气流控制方法
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Application No.: US14455019Application Date: 2014-08-08
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Publication No.: US09384949B2Publication Date: 2016-07-05
- Inventor: Zi-Neng Huang , Chang-Sheng Lee , Shen-Chieh Liu , Cherng-Chang Tsuei
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD
- Current Assignee Address: TW Hsin-Chu
- Agency: McClure, Qualey & Rodack, LLP
- Main IPC: H01J37/32
- IPC: H01J37/32 ; C23C16/455 ; H01L21/3065 ; H01L21/67

Abstract:
A gas-flow control method for a plasma apparatus is provided. The gas-flow control method includes mounting a first adjusting mechanism on a gas-distribution plate. The gas-distribution plate includes a number of exhaust openings, and the exhaust openings in a first area of the gas-distribution plate are masked by the first adjusting mechanism. The gas-flow control method also includes exhausting a gas from the exhaust openings in a first unmasked area of the gas-distribution plate, and the gas passing through the first adjusting mechanism into a plasma chamber. The gas-flow control method further includes generating an electric field to excite the gas in the plasma chamber into plasma.
Public/Granted literature
- US20160042982A1 GAS-FLOW CONTROL METHOD FOR PLASMA APPARATUS Public/Granted day:2016-02-11
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