Invention Grant
- Patent Title: Tungsten salicide gate source for vertical NAND string to control on current and cell pillar fabrication
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Application No.: US14635482Application Date: 2015-03-02
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Publication No.: US09384995B2Publication Date: 2016-07-05
- Inventor: Fatma Arzum Simsek-Ege , Krishna K Parat
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Alpine Technology Law Group LLC
- Main IPC: H01L29/792
- IPC: H01L29/792 ; H01L21/308 ; H01L29/423 ; H01L29/66 ; H01L29/788 ; H01L27/115 ; H01L29/49
Abstract:
A non-volatile memory device and a method for forming the non-volatile memory device are disclosed. During fabrication of the memory device, a tungsten salicide is utilized as an etch-stop layer in place of a conventionally used aluminum oxide to form channel pillars having a high aspect ratio. Use of the tungsten salicide is useful for eliminating an undesired etch-stop recess and an undesired floating gate that is formed when an Al oxide etch-stop layer is conventionally used.
Public/Granted literature
- US20150311087A1 TUNGSTEN SALICIDE GATE SOURCE FOR VERTICAL NAND STRING TO CONTROL ON CURRENT AND CELL PILLAR FABRICATION Public/Granted day:2015-10-29
Information query
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