Invention Grant
- Patent Title: Selective local metal cap layer formation for improved electromigration behavior
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Application No.: US14721410Application Date: 2015-05-26
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Publication No.: US09385038B2Publication Date: 2016-07-05
- Inventor: Matthew S. Angyal , Junjing Bao , Griselda Bonilla , Samuel S. Choi , James A. Culp , Thomas W. Dyer , Ronald G. Filippi , Stephen E. Greco , Naftali E. Lustig , Andrew H. Simon
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Cantor Colburn LLP
- Agent Steven Meyers
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L21/4763 ; H01L21/768 ; H01L23/532
Abstract:
A method of forming a wiring structure for an integrated circuit device includes forming one or more copper lines within an interlevel dielectric layer (ILD); masking selected regions of the one or more copper lines; selectively plating metal cap regions over exposed regions of the one or more copper lines; and forming a conformal insulator layer over the metal cap regions and uncapped regions of the one or more copper lines.
Public/Granted literature
- US20150255398A1 SELECTIVE LOCAL METAL CAP LAYER FORMATION FOR IMPROVED ELECTROMIGRATION BEHAVIOR Public/Granted day:2015-09-10
Information query
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