An electrostatic discharge (ESD) protection device on a semiconductor substrate and a method for making the same. The device has an active region. The active region includes a gate. The active region also includes a source including a silicide portion having a source contact. The active region further includes a drain including a silicide portion having a drain contact. The source and drain each extend away from the gate along a device axis. The drain contact is laterally offset with respect to the source contact along a direction orthogonal to the device axis whereby current flow between the source contact and the drain contact has a lateral component. The device further comprises a non-silicide region located laterally between the drain contact and the source contact.