公开(公告)号：US20150311194A1

公开(公告)日：2015-10-29

申请号：US14692988

申请日：2015-04-22

Applicant: NXP B.V.

Inventor： Dolphin Abessolo Bidzo ,  Bart van Velzen

IPC: H01L27/02 ,  H01L21/285 ,  H01L29/66 ,  H01L21/027 ,  H01L29/45 ,  H01L29/78

CPC classification number: H01L27/0266 ,  H01L21/027 ,  H01L21/28518 ,  H01L27/0248 ,  H01L27/0259 ,  H01L29/41725 ,  H01L29/45 ,  H01L29/665 ,  H01L29/78

Abstract: An electrostatic discharge (ESD) protection device on a semiconductor substrate and a method for making the same. The device has an active region. The active region includes a gate. The active region also includes a source including a silicide portion having a source contact. The active region further includes a drain including a silicide portion having a drain contact. The source and drain each extend away from the gate along a device axis. The drain contact is laterally offset with respect to the source contact along a direction orthogonal to the device axis whereby current flow between the source contact and the drain contact has a lateral component. The device further comprises a non-silicide region located laterally between the drain contact and the source contact.

Abstract translation: 半导体衬底上的静电放电（ESD）保护器件及其制造方法。 该设备具有活动区域。 有源区包括一个门。 有源区还包括源，该源包括具有源极接触的硅化物部分。 有源区还包括漏极，其包括具有漏极接触的硅化物部分。 源极和漏极各自沿着器件轴线远离栅极延伸。 漏极接触件沿着与器件轴线正交的方向相对于源极接触侧向偏移，从而源极接触件和漏极接触件之间的电流流动具有侧向部件。 该器件还包括位于漏极接触件和源极接触件之间的非硅化物区域。

公开(公告)号：US09385116B2

公开(公告)日：2016-07-05

申请号：US14692988

申请日：2015-04-22

Applicant: NXP B.V.

Inventor： Dolphin Abessolo Bidzo ,  Bart van Velzen

IPC: H01L29/00 ,  H01L27/02 ,  H01L29/417 ,  H01L21/027 ,  H01L21/285 ,  H01L29/45 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L27/0266 ,  H01L21/027 ,  H01L21/28518 ,  H01L27/0248 ,  H01L27/0259 ,  H01L29/41725 ,  H01L29/45 ,  H01L29/665 ,  H01L29/78

Abstract: An electrostatic discharge (ESD) protection device on a semiconductor substrate and a method for making the same. The device has an active region. The active region includes a gate. The active region also includes a source including a silicide portion having a source contact. The active region further includes a drain including a silicide portion having a drain contact. The source and drain each extend away from the gate along a device axis. The drain contact is laterally offset with respect to the source contact along a direction orthogonal to the device axis whereby current flow between the source contact and the drain contact has a lateral component. The device further comprises a non-silicide region located laterally between the drain contact and the source contact.

Abstract translation: 半导体衬底上的静电放电（ESD）保护器件及其制造方法。 该设备具有活动区域。 有源区包括一个门。 有源区还包括源，该源包括具有源极接触的硅化物部分。 有源区还包括漏极，其包括具有漏极接触的硅化物部分。 源极和漏极各自沿着器件轴线远离栅极延伸。 漏极接触件沿着与器件轴线正交的方向相对于源极接触侧向偏移，从而源极接触件和漏极接触件之间的电流流动具有侧向部件。 该器件还包括位于漏极接触件和源极接触件之间的非硅化物区域。