Invention Grant
US09385181B2 Semiconductor diode and method of manufacturing a semiconductor diode
有权
半导体二极管及制造半导体二极管的方法
- Patent Title: Semiconductor diode and method of manufacturing a semiconductor diode
- Patent Title (中): 半导体二极管及制造半导体二极管的方法
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Application No.: US14162311Application Date: 2014-01-23
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Publication No.: US09385181B2Publication Date: 2016-07-05
- Inventor: Hans Peter Felsl , Elmar Falck , Manfred Pfaffenlehner , Frank Hille , Andreas Haertl , Holger Schulze , Daniel Schloegl
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Main IPC: H01L29/861
- IPC: H01L29/861 ; H01L29/06 ; H01L29/66 ; H01L29/36 ; H01L29/16 ; H01L29/20

Abstract:
A semiconductor diode includes a semiconductor body having opposite first and second sides. A first and a second semiconductor region are consecutively arranged along a lateral direction at the second side. The first and second semiconductor regions are of opposite first and second conductivity types and are electrically coupled to an electrode at the second side. The semiconductor diode further includes a third semiconductor region of the second conductivity type buried in the semiconductor body at a distance from the second side. The second and third semiconductor regions are separated from each other.
Public/Granted literature
- US20150206983A1 Semiconductor Diode and Method of Manufacturing a Semiconductor Diode Public/Granted day:2015-07-23
Information query
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