Invention Grant
- Patent Title: Semiconductor devices including a guard ring and related semiconductor systems
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Application No.: US14705050Application Date: 2015-05-06
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Publication No.: US09385185B2Publication Date: 2016-07-05
- Inventor: Hoon Chang , Dong-Eun Jang
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel & Sibley, P.A.
- Priority: KR10-2012-0036187 20120406
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/06 ; H01L29/78 ; H01L29/417
Abstract:
Semiconductor devices are provided. The semiconductor devices may include a substrate and a transistor on the substrate. The semiconductor devices may include a first guard ring of first conductivity type in the substrate adjacent the transistor. The semiconductor devices may include a second guard ring of second conductivity type opposite the first conductivity type in the substrate adjacent the first guard ring. Related semiconductor systems are also provided.
Public/Granted literature
- US20150236087A1 SEMICONDUCTOR DEVICES INCLUDING A GUARD RING AND RELATED SEMICONDUCTOR SYSTEMS Public/Granted day:2015-08-20
Information query
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