公开(公告)号：US08975693B2

公开(公告)日：2015-03-10

申请号：US13683505

申请日：2012-11-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eung-Kyu Lee ,  Jae-June Jang ,  Hoon Chang ,  Min-Hwan Kim ,  Sung-Ryoul Bae ,  Dong-Eun Jang

IPC: H01L29/78 ,  H01L29/66 ,  H01L29/08 ,  H01L29/10 ,  H01L29/06

CPC classification number: H01L29/7816 ,  H01L29/0653 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/66681

Abstract: A semiconductor device includes a semiconductor substrate of a first conductivity type, a buried layer a second conductivity type different from the first conductivity type on the substrate and an epitaxial layer of the second conductivity type on the buried layer. The device further includes a pocket well of the first conductivity type in the epitaxial layer, a first drift region in the epitaxial layer at least partially overlapping the pocket well, a second drift region in the epitaxial layer and spaced apart from the first drift region, and a body region of the first conductivity type in the pocket well. A gate electrode is disposed on the body region, the pocket well and the first drift region and has an edge overlying the epitaxial region between the first and second drift regions.

Abstract translation: 半导体器件包括第一导电类型的半导体衬底，与衬底上的第一导电类型不同的第二导电类型的掩埋层和在掩埋层上的第二导电类型的外延层。 器件还包括在外延层中的第一导电类型的凹穴，外延层中的至少部分地与凹穴阱重叠的第一漂移区，外延层中的与第一漂移区间隔开的第二漂移区， 以及口袋中的第一导电类型的体区。 栅电极设置在体区，口腔和第一漂移区上，并且具有覆盖第一和第二漂移区之间的外延区的边缘。

公开(公告)号：US20130256794A1

公开(公告)日：2013-10-03

申请号：US13683505

申请日：2012-11-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eung-Kyu Lee ,  Jae-June Jang ,  Hoon Chang ,  Min-Hwan Kim ,  Sung-Ryoul Bae ,  Dong-Eun Jang

IPC: H01L29/78

CPC classification number: H01L29/7816 ,  H01L29/0653 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/66681

Abstract: A semiconductor device includes a semiconductor substrate of a first conductivity type, a buried layer a second conductivity type different from the first conductivity type on the substrate and an epitaxial layer of the second conductivity type on the buried layer. The device further includes a pocket well of the first conductivity type in the epitaxial layer, a first drift region in the epitaxial layer at least partially overlapping the pocket well, a second drift region in the epitaxial layer and spaced apart from the first drift region, and a body region of the first conductivity type in the pocket well. A gate electrode is disposed on the body region, the pocket well and the first drift region and has an edge overlying the epitaxial region between the first and second drift regions.

Abstract translation: 半导体器件包括第一导电类型的半导体衬底，与衬底上的第一导电类型不同的第二导电类型的掩埋层和在掩埋层上的第二导电类型的外延层。 器件还包括在外延层中的第一导电类型的凹穴，外延层中的至少部分地与凹穴阱重叠的第一漂移区，外延层中的与第一漂移区间隔开的第二漂移区， 以及口袋中的第一导电类型的体区。 栅电极设置在体区，口腔和第一漂移区上，并且具有覆盖第一和第二漂移区之间的外延区的边缘。

公开(公告)号：US09385185B2

公开(公告)日：2016-07-05

申请号：US14705050

申请日：2015-05-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hoon Chang ,  Dong-Eun Jang

IPC: H01L29/66 ,  H01L29/06 ,  H01L29/78 ,  H01L29/417

CPC classification number: H01L29/0619 ,  H01L21/823481 ,  H01L21/823493 ,  H01L27/0921 ,  H01L29/0653 ,  H01L29/0657 ,  H01L29/0878 ,  H01L29/1045 ,  H01L29/1083 ,  H01L29/1087 ,  H01L29/1095 ,  H01L29/41758 ,  H01L29/7816 ,  H01L29/7835 ,  H03K17/687

Abstract: Semiconductor devices are provided. The semiconductor devices may include a substrate and a transistor on the substrate. The semiconductor devices may include a first guard ring of first conductivity type in the substrate adjacent the transistor. The semiconductor devices may include a second guard ring of second conductivity type opposite the first conductivity type in the substrate adjacent the first guard ring. Related semiconductor systems are also provided.

公开(公告)号：US20150236087A1

公开(公告)日：2015-08-20

申请号：US14705050

申请日：2015-05-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hoon Chang ,  Dong-Eun Jang

IPC: H01L29/06 ,  H01L29/417 ,  H01L29/78

CPC classification number: H01L29/0619 ,  H01L21/823481 ,  H01L21/823493 ,  H01L27/0921 ,  H01L29/0653 ,  H01L29/0657 ,  H01L29/0878 ,  H01L29/1045 ,  H01L29/1083 ,  H01L29/1087 ,  H01L29/1095 ,  H01L29/41758 ,  H01L29/7816 ,  H01L29/7835 ,  H03K17/687

Abstract: Semiconductor devices are provided. The semiconductor devices may include a substrate and a transistor on the substrate. The semiconductor devices may include a first guard ring of first conductivity type in the substrate adjacent the transistor. The semiconductor devices may include a second guard ring of second conductivity type opposite the first conductivity type in the substrate adjacent the first guard ring. Related semiconductor systems are also provided.

Abstract translation: 提供半导体器件。 半导体器件可以包括衬底和衬底上的晶体管。 半导体器件可以包括在与晶体管相邻的衬底中的第一导电类型的第一保护环。 半导体器件可以包括与邻近第一保护环的衬底中的第一导电类型相反的第二导电类型的第二保护环。 还提供了相关半导体系统。