Invention Grant
- Patent Title: FINFET transistor structure and method for making the same
- Patent Title (中): FINFET晶体管结构及其制造方法
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Application No.: US14288369Application Date: 2014-05-27
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Publication No.: US09385193B2Publication Date: 2016-07-05
- Inventor: Rai-Min Huang , Sheng-Huei Dai , Chen-Hua Tsai , Duan Quan Liao , Yikun Chen , Xiao Zhong Zhu
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Science-Based Industrial Park, Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Science-Based Industrial Park, Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L27/108 ; H01L29/66 ; H01L29/78
Abstract:
A FINFET transistor structure includes a substrate including a fin structure. Two combined recesses embedded within the substrate, wherein each of the combined recesses includes a first recess extending in a vertical direction and a second recess extending in a lateral direction, the second recess has a protruding side extending to and under the fin structure. Two filling layers respectively fill in the combined recesses. A gate structure crosses the fin structure.
Public/Granted literature
- US20140252482A1 FINFET TRANSISTOR STRUCTURE AND METHOD FOR MAKING THE SAME Public/Granted day:2014-09-11
Information query
IPC分类:
