Invention Grant
- Patent Title: Semiconductor device with insert structure at a rear side and method of manufacturing
- Patent Title (中): 背面具有插入结构的半导体器件及其制造方法
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Application No.: US14180924Application Date: 2014-02-14
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Publication No.: US09385222B2Publication Date: 2016-07-05
- Inventor: Johannes Georg Laven , Hans-Joachim Schulze , Anton Mauder , Erich Griebl
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L29/739 ; H01L21/02 ; H01L21/225 ; H01L21/265 ; H01L21/306 ; H01L21/324 ; H01L29/04 ; H01L29/06 ; H01L29/10 ; H01L29/16 ; H01L29/36 ; H01L29/66 ; H01L21/683 ; H01L23/544
Abstract:
A cavity is formed in a first semiconductor layer that is formed on a semiconducting base layer. The cavity extends from a process surface of the first semiconductor layer to the base layer. A recessed mask liner is formed on a portion of a sidewall of the cavity distant to the process surface or a mask plug is formed in a portion of the cavity distant do the process surface. A second semiconductor layer is grown by epitaxy on the process surface. The second semiconductor layer spans the cavity.
Public/Granted literature
- US20150236142A1 Semiconductor Device with Insert Structure at a Rear Side and Method of Manufacturing Public/Granted day:2015-08-20
Information query
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