Invention Grant
- Patent Title: Semiconductor device with cell trench structures and contacts and method of manufacturing a semiconductor device
- Patent Title (中): 具有单元槽结构和触点的半导体器件和制造半导体器件的方法
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Application No.: US14092312Application Date: 2013-11-27
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Publication No.: US09385228B2Publication Date: 2016-07-05
- Inventor: Johannes Georg Laven , Maria Cotorogea
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/417 ; H01L29/423 ; H01L29/10 ; H01L29/06 ; H01L29/66 ; H01L21/265 ; H01L29/40 ; H01L29/08
Abstract:
A semiconductor mesa is formed in a semiconductor layer between a first cell trench structure and a second cell trench structure extending from a first surface into the semiconductor layer. An opening is formed in a capping layer formed on the first surface, wherein the opening exposes at least a portion of the semiconductor mesa. Through the opening impurities of a first conductivity type are introduced into the exposed portion of the semiconductor mesa. A recess defined by the opening is formed.
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