Invention Grant
- Patent Title: Charge pump circuit and semiconductor device including the same
- Patent Title (中): 电荷泵电路和包括其的半导体器件
-
Application No.: US14457525Application Date: 2014-08-12
-
Publication No.: US09385592B2Publication Date: 2016-07-05
- Inventor: Kazunori Watanabe , Tomoaki Atsumi
- Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Fish & Richardson P.C.
- Priority: JP2013-171308 20130821; JP2014-013156 20140128
- Main IPC: G05F1/10
- IPC: G05F1/10 ; H02M3/07

Abstract:
Efficiency of a charge pump circuit is increased. The charge pump circuit includes serially connected fundamental circuits each including a diode-connected transistor and a capacitor. At least one transistor is provided with a back gate, and the back gate is connected to any node in the charge pump circuit. For example, the charge pump circuit is of a step-up type; in which case, if the transistor is an n-channel transistor, a back gate of the transistor in the last stage is connected to an output node of the charge pump circuit. Back gates of the transistors in the other stages are connected to an input node of the charge pump circuit. In this way, the voltage holding capability of the fundamental circuit in the last stage is increased, and the conversion efficiency can be increased because an increase in the threshold of the transistors in the other stages is prevented.
Public/Granted literature
- US20150054571A1 CHARGE PUMP CIRCUIT AND SEMICONDUCTOR DEVICE INCLUDING THE SAME Public/Granted day:2015-02-26
Information query
IPC分类: