Invention Grant
US09386380B2 Method for the integration of a microelectromechanical systems (MEMS) microphone device with a complementary metal-oxide-semiconductor (CMOS) device
有权
用于将微机电系统(MEMS)麦克风装置与互补金属氧化物半导体(CMOS)器件集成的方法
- Patent Title: Method for the integration of a microelectromechanical systems (MEMS) microphone device with a complementary metal-oxide-semiconductor (CMOS) device
- Patent Title (中): 用于将微机电系统(MEMS)麦克风装置与互补金属氧化物半导体(CMOS)器件集成的方法
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Application No.: US14524074Application Date: 2014-10-27
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Publication No.: US09386380B2Publication Date: 2016-07-05
- Inventor: Chia-Hua Chu , Chun-Wen Cheng
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Eschweiler & Associates, LLC
- Main IPC: H04R19/00
- IPC: H04R19/00 ; H04R19/04 ; H04R31/00

Abstract:
A microelectromechanical systems (MEMS) package includes a MEMS device and an integrated circuit (IC) device connected by a through silicon via (TSV). A conductive MEMS structure is arranged in a dielectric layer and includes a membrane region extending across a first volume arranged in the dielectric layer. A first substrate is bonded to a second substrate through the dielectric layer, where the MEMS device includes the second substrate. The TSV extends through the second substrate to electrically couple the MEMS device to the IC device. A third substrate is bonded to the second substrate to define a second volume between the second substrate and the third substrate, where the IC device includes the first or third substrate. A method for manufacturing the MEMS package is also provided.
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