Invention Grant
US09390782B2 Memory with refresh logic to accommodate low-retention storage rows
有权
具有刷新逻辑的内存,以适应低保留存储行
- Patent Title: Memory with refresh logic to accommodate low-retention storage rows
- Patent Title (中): 具有刷新逻辑的内存,以适应低保留存储行
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Application No.: US14306174Application Date: 2014-06-16
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Publication No.: US09390782B2Publication Date: 2016-07-12
- Inventor: Scott C. Best , Ely Tsern
- Applicant: Rambus Inc.
- Applicant Address: US CA Sunnyvale
- Assignee: Rambus Inc.
- Current Assignee: Rambus Inc.
- Current Assignee Address: US CA Sunnyvale
- Agency: Peninsula Patent Group
- Agent Lance Kreisman
- Main IPC: G11C11/406
- IPC: G11C11/406 ; G06F13/16

Abstract:
An apparatus is disclosed that includes a memory controller chip and memory chips packaged with the memory controller chip. Each memory chip includes normal-retention storage rows that exhibit retention times greater or equal to a first time interval, and having been tested to generate information identifying low-retention storage rows that exhibit retention times less than the first time interval. Refresh logic refreshes the normal-retention storage rows at a first refresh rate corresponding to the first time interval, and refreshes each low-retention storage row at a second refresh rate that is greater than the first refresh rate.
Public/Granted literature
- US20140293725A1 MEMORY WITH REFRESH LOGIC TO ACCOMODATE LOW-RETENTION STORAGE ROWS Public/Granted day:2014-10-02
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