Invention Grant
US09390883B2 Implantation apparatus with ion beam directing unit, semiconductor device and method of manufacturing
有权
具有离子束引导单元，半导体器件和制造方法的植入装置
- Patent Title: Implantation apparatus with ion beam directing unit, semiconductor device and method of manufacturing
- Patent Title (中): 具有离子束引导单元，半导体器件和制造方法的植入装置
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Application No.: US14177910Application Date: 2014-02-11
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Publication No.: US09390883B2Publication Date: 2016-07-12
- Inventor: Alexander Breymesser , Stephan Voss , Hans-Joachim Schulze , Werner Schustereder
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Main IPC: H01J37/147
- IPC: H01J37/147 ; H01J37/20 ; H01J37/317 ; H01L29/06 ; H01L29/744 ; H01L29/45
Abstract:
An ion implantation apparatus includes an ion beam directing unit, a substrate support, and a controller. The controller is configured to effect a relative movement between an ion beam passing the ion beam directing unit and the substrate support. A beam track of the ion beam on a substrate mounted on the substrate support includes circles or a spiral.
Public/Granted literature
- US20150228446A1 Implantation Apparatus with Ion Beam Directing Unit, Semiconductor Device and Method of Manufacturing Public/Granted day:2015-08-13
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