发明授权
US09390934B2 Phase shift mask, method of forming asymmetric pattern, method of manufacturing diffraction grating, and method of manufacturing semiconductor device
有权
相移掩模，不对称图案的形成方法，衍射光栅的制造方法以及制造半导体器件的方法
- 专利标题： Phase shift mask, method of forming asymmetric pattern, method of manufacturing diffraction grating, and method of manufacturing semiconductor device
- 专利标题（中）： 相移掩模，不对称图案的形成方法，衍射光栅的制造方法以及制造半导体器件的方法
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申请号： US14350314申请日： 2012-09-13
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公开(公告)号： US09390934B2公开(公告)日： 2016-07-12
- 发明人: Kazuyuki Kakuta , Toshihiko Onozuka , Shigeru Matsui , Yoshisada Ebata , Norio Hasegawa
- 申请人： Kazuyuki Kakuta , Toshihiko Onozuka , Shigeru Matsui , Yoshisada Ebata , Norio Hasegawa
- 申请人地址： JP Tokyo
- 专利权人： HITACHI HIGH-TECHNOLOGIES CORPORATION
- 当前专利权人： HITACHI HIGH-TECHNOLOGIES CORPORATION
- 当前专利权人地址： JP Tokyo
- 代理机构： McDermott Will & Emery LLP
- 优先权： JP2011-222907 20111007
- 国际申请： PCT/JP2012/073479 WO 20120913
- 国际公布： WO2013/051384 WO 20130411
- 主分类号： G03F1/26
- IPC分类号： G03F1/26 ; H01L21/3065 ; G03F1/30 ; H01L21/308 ; G03F1/00
摘要：
A technique of forming an asymmetric pattern by using a phase shift mask, and further, techniques of manufacturing a diffraction grating and a semiconductor device, capable of improving accuracy of a product and capable of shortening manufacturing time. In a method of manufacturing a diffraction grating by using a phase shift mask (in which a light shield part and a light transmission part are periodically arranged), light emitted from an illumination light source is transmitted through the phase shift mask, and a photoresist on a surface of a Si wafer is exposed by providing interference between zero diffraction order light and positive first diffraction order light which are generated by the transmission through this phase shift mask onto the surface of the Si wafer, and a diffraction grating which has a blazed cross-sectional shape is formed on the Si wafer.