Invention Grant
US09391200B2 FinFETs having strained channels, and methods of fabricating finFETs having strained channels
有权
具有应变通道的FinFET以及制造具有应变通道的finFET的方法
- Patent Title: FinFETs having strained channels, and methods of fabricating finFETs having strained channels
- Patent Title (中): 具有应变通道的FinFET以及制造具有应变通道的finFET的方法
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Application No.: US14308045Application Date: 2014-06-18
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Publication No.: US09391200B2Publication Date: 2016-07-12
- Inventor: Qing Liu , Xiuyu Cai , Ruilong Xie , Chun-chen Yeh
- Applicant: STMicroelectronics, Inc. , International Business Machines Corporation , GLOBALFOUNDRIES Inc.
- Applicant Address: US TX Coppell US NY Armonk KY Grand Cayman
- Assignee: STMicroelectronics, Inc.,International Business Machines Corporation,GLOBALFOUNDRIES Inc.
- Current Assignee: STMicroelectronics, Inc.,International Business Machines Corporation,GLOBALFOUNDRIES Inc.
- Current Assignee Address: US TX Coppell US NY Armonk KY Grand Cayman
- Agency: Gardere Wynne Sewell LLP
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L29/78 ; H01L29/66 ; H01L21/306 ; H01L21/311
Abstract:
Techniques and structures for controlling etch-back of a finFET fin are described. One or more layers may be deposited over the fin and etched. Etch-back of a planarization layer may be used to determine a self-limited etch height of one or more layers adjacent the fin and a self-limited etch height of the fin. Strain-inducing material may be formed at regions of the etched fin to induce strain in the channel of a finFET.
Public/Granted literature
- US20150372140A1 FINFETS HAVING STRAINED CHANNELS, AND METHODS OF FABRICATING FINFETS HAVING STRAINED CHANNELS Public/Granted day:2015-12-24
Information query
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