Invention Grant
- Patent Title: Thin film transistor and display device using the same
- Patent Title (中): 薄膜晶体管和使用其的显示装置
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Application No.: US14245102Application Date: 2014-04-04
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Publication No.: US09391213B2Publication Date: 2016-07-12
- Inventor: Isao Suzumura , Norihiro Uemura , Takeshi Noda , Hidekazu Miyake , Yohei Yamaguchi
- Applicant: Japan Display Inc.
- Applicant Address: JP Tokyo
- Assignee: Japan Display Inc.
- Current Assignee: Japan Display Inc.
- Current Assignee Address: JP Tokyo
- Agency: Ulmer & Berne LLP
- Priority: JP2013-083282 20130411
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L27/12
Abstract:
In a bottom gate thin film transistor using a first oxide semiconductor layer as a channel layer, the first oxide semiconductor layer and second semiconductor layers include In and O. An (O/In) ratio of the second oxide semiconductor layers is equal to or larger than that of the first oxide semiconductor layer, and a film thickness thereof is thicker than that of the first oxide semiconductor layer.
Public/Granted literature
- US20140307194A1 THIN FILM TRANSISTOR AND DISPLAY DEVICE USING THE SAME Public/Granted day:2014-10-16
Information query
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