Invention Grant
US09392643B2 Heating plate with planar heater zones for semiconductor processing
有权
具有用于半导体加工的平面加热器区域的加热板
- Patent Title: Heating plate with planar heater zones for semiconductor processing
- Patent Title (中): 具有用于半导体加工的平面加热器区域的加热板
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Application No.: US14062216Application Date: 2013-10-24
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Publication No.: US09392643B2Publication Date: 2016-07-12
- Inventor: Harmeet Singh , Keith Gaff , Neil Benjamin , Keith Comendant
- Applicant: Lam Research Corporation
- Applicant Address: US CA Fremont
- Assignee: LAM RESEARCH CORPORATION
- Current Assignee: LAM RESEARCH CORPORATION
- Current Assignee Address: US CA Fremont
- Agency: Buchanan Ingersoll & Rooney PC
- Main IPC: H01L21/68
- IPC: H01L21/68 ; H01L23/28 ; H01L23/52 ; F27B5/14 ; F27D11/02 ; H05B3/00 ; C23C14/54 ; C23C16/458 ; H01L21/67 ; H01L21/3065 ; H05B1/02 ; H05B3/26 ; H01L21/683
Abstract:
An exemplary method for manufacturing a heating plate for a substrate support assembly includes forming holes in at least one sheet, printing a slurry of conductor powder, or pressing a precut metal foil, or spraying a slurry of conductor powder, on the at least one sheet to form the planar heater zones, the power supply lines, and power return lines. The holes in the at least one sheet are filled with a slurry of conductor powder to form power supply and power return vias. The sheets are then aligned, pressed, and bonded to form the heating plate.
Public/Granted literature
- US20140047705A1 HEATING PLATE WITH PLANAR HEATER ZONES FOR SEMICONDUCTOR PROCESSING Public/Granted day:2014-02-20
Information query
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