The present disclosure relates to method of forming a MEMS device that mitigates the above mentioned difficulties. In some embodiments, the present disclosure relates to a method of forming a MEMS device, which forms one or more cavities within a first side of a carrier substrate. The first side of the carrier substrate is then bonded to a dielectric layer disposed on a micro-electromechanical system (MEMS) substrate, and the MEMS substrate is subsequently patterned to define a soft mechanical structure over the one or more cavities. The dielectric layer is then selectively removed, using a dry etching process, to release the one or more soft mechanical structures. A CMOS substrate is bonded to a second side of the MEMS substrate, by way of a bonding structure disposed between the CMOS substrate and the MEMS substrate, using a low-temperature bonding process.