Invention Grant
- Patent Title: Semiconductor device and method for manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US14598080Application Date: 2015-01-15
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Publication No.: US09396994B2Publication Date: 2016-07-19
- Inventor: Hyungjun Kim , Jaehong Yoon , Soohyeon Kim , Han-Bo-Ram Lee
- Applicant: Industry-Academic Cooperation Foundation, Yonsei University , Incheon University Industry Academic Cooperation Foundation
- Applicant Address: KR Incheon
- Assignee: INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY
- Current Assignee: INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY
- Current Assignee Address: KR Incheon
- Agency: Procopio, Cory, Hargreaves & Savitch LLP
- Priority: KR10-2014-0173755 20141205
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L23/00 ; H01L23/532
Abstract:
The present invention relates to a semiconductor device and a method for manufacturing the same. Disclosed is a semiconductor device including a substrate, a conductive line on the substrate, and a seed layer between the substrate and the conductive line, the seed layer including cobalt titanium nitride.
Public/Granted literature
- US20160163588A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2016-06-09
Information query
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