Invention Grant
US09396995B1 MOL contact metallization scheme for improved yield and device reliability
有权
MOL接触金属化方案，提高产量和器件可靠性
- Patent Title: MOL contact metallization scheme for improved yield and device reliability
- Patent Title (中): MOL接触金属化方案，提高产量和器件可靠性
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Application No.: US14634080Application Date: 2015-02-27
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Publication No.: US09396995B1Publication Date: 2016-07-19
- Inventor: Suraj K. Patil , Min-hwa Chi , Garo Derderian , Wen-Pin Peng
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Ditthavong & Steiner, P.C.
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L21/285 ; H01L21/02 ; H01L21/263 ; H01L21/3065 ; H01L21/265 ; H01L29/49
Abstract:
A method of forming a metalized contact in MOL is provided. Embodiments include forming a TT through an ILD down to a S/D region; forming a SiOC, SiCN, or SiON layer on side surfaces of the TT; performing a GCIB vertical etching at a 0° angle; implanting Si into the TT by an angled PAI; removing a portion of the TT by Ar sputtering and a remote plasma assisted dry etch process; forming NiSi on the S/D region at the bottom of the TT; and filling the TT with contact metal over the NiSi.
Information query
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