公开(公告)号：US09396995B1

公开(公告)日：2016-07-19

申请号：US14634080

申请日：2015-02-27

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Suraj K. Patil ,  Min-hwa Chi ,  Garo Derderian ,  Wen-Pin Peng

IPC: H01L21/768 ,  H01L21/285 ,  H01L21/02 ,  H01L21/263 ,  H01L21/3065 ,  H01L21/265 ,  H01L29/49

CPC classification number: H01L21/7684 ,  H01L21/02068 ,  H01L21/28518 ,  H01L21/28562 ,  H01L21/76814 ,  H01L21/76831 ,  H01L21/76843 ,  H01L21/76855 ,  H01L21/76897 ,  H01L23/485 ,  H01L23/53266 ,  H01L29/456

Abstract: A method of forming a metalized contact in MOL is provided. Embodiments include forming a TT through an ILD down to a S/D region; forming a SiOC, SiCN, or SiON layer on side surfaces of the TT; performing a GCIB vertical etching at a 0° angle; implanting Si into the TT by an angled PAI; removing a portion of the TT by Ar sputtering and a remote plasma assisted dry etch process; forming NiSi on the S/D region at the bottom of the TT; and filling the TT with contact metal over the NiSi.

Abstract translation: 提供了一种在MOL中形成金属化接触的方法。 实施例包括通过ILD形成TT到S / D区域; 在TT的侧表面上形成SiOC，SiCN或SiON层; 以0°角执行GCIB垂直蚀刻; 通过角度PAI将Si注入TT; 通过Ar溅射和远程等离子体辅助干蚀刻工艺去除TT的一部分; 在TT底部的S / D区域形成NiSi; 并用NiSi上的接触金属填充TT。