Invention Grant
- Patent Title: Methods of forming openings in semiconductor structures
- Patent Title (中): 在半导体结构中形成开口的方法
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Application No.: US14848912Application Date: 2015-09-09
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Publication No.: US09396996B2Publication Date: 2016-07-19
- Inventor: Adam L. Olson , Kaveri Jain , Lijing Gou , William R. Brown , Ho Seop Eom , Xue (Gloria) Chen , Anton J. deVilliers
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: TraskBritt
- Main IPC: H01L21/31
- IPC: H01L21/31 ; H01L21/469 ; H01L21/768 ; H01L21/467 ; H01L23/52 ; H01L21/027 ; H01L21/02 ; H01L21/308
Abstract:
A method of forming a semiconductor structure comprises forming pools of acidic or basic material in a substrate structure. A resist is formed over the pools of acidic or basic material and the substrate structure. The acidic or basic material is diffused from the pools into portions of the resist proximal to the pools more than into portions of the resist distal to the pools. Then, the resist is exposed to a developer to remove a greater amount of the resist portions proximal to the pools compared to the resist portions distal to the pools to form openings in the resist. The openings have wider portions proximal to the substrate structure and narrower portions distal to the substrate structure. The method may further comprise forming features in the openings of the resist. The features have wider portions proximal to the substrate structure and narrower portions distal to the substrate structure.
Public/Granted literature
- US20150380307A1 METHODS OF FORMING OPENINGS IN SEMICONDUCTOR STRUCTURES Public/Granted day:2015-12-31
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