发明授权
- 专利标题： Method for producing a semiconductor component with insulated semiconductor mesas
- 专利标题（中）： 用绝缘半导体台面制造半导体部件的方法
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申请号： US13288271申请日： 2011-11-03
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公开(公告)号： US09396997B2公开(公告)日： 2016-07-19
- 发明人: Franz Hirler , Anton Mauder , Hermann Gruber , Hubert Rothleitner , Andreas Peter Meiser
- 申请人： Franz Hirler , Anton Mauder , Hermann Gruber , Hubert Rothleitner , Andreas Peter Meiser
- 申请人地址： DE Neubiberg
- 专利权人： Infineon Technologies AG
- 当前专利权人： Infineon Technologies AG
- 当前专利权人地址： DE Neubiberg
- 代理机构： Murphy, Bilak & Homiller, PLLC
- 主分类号： H01L21/76
- IPC分类号： H01L21/76 ; H01L21/768 ; H01L23/48 ; H01L29/06 ; H01L29/423 ; H01L29/739 ; H01L29/78 ; H01L21/762 ; H01L21/8234 ; H01L23/00 ; H01L27/088 ; H01L29/40 ; H01L29/417 ; H01L29/45 ; H01L29/66
摘要：
A method for producing a semiconductor component is provided. The method includes providing a semiconductor body with a first surface and a second surface opposite to the first surface, etching an insulation trench from the first surface partially into the semiconductor body, forming a first insulation layer on one or more sidewalls of the insulation trench, processing the second surface by at least one of grinding, polishing and a CMP-process to expose the first insulation layer, and depositing on the processed second surface a second insulation layer which extends to the first insulation layer.
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