Invention Grant
US09397013B2 Method of controlling an etching process for forming fine patterns of a semiconductor device
有权
控制用于形成半导体器件精细图案的蚀刻工艺的方法
- Patent Title: Method of controlling an etching process for forming fine patterns of a semiconductor device
- Patent Title (中): 控制用于形成半导体器件精细图案的蚀刻工艺的方法
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Application No.: US14854528Application Date: 2015-09-15
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Publication No.: US09397013B2Publication Date: 2016-07-19
- Inventor: Chongkwang Chang , Sungwoo Kang , Chunghowan Kim , Youngmook Oh , Seobum Lee , Gahyun Lim
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Onello & Mello, LLP
- Priority: KR10-2014-0134127 20141006
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/66 ; H01L21/308
Abstract:
A method of controlling an etching process for forming fine patterns of a semiconductor device includes forming a lower pattern having a plurality of openings on a substrate, obtaining a width value of the lower pattern, and controlling a process recipe of an etching process for forming the lower pattern by using the width value.
Public/Granted literature
- US20160099185A1 METHOD OF CONTROLLING AN ETCHING PROCESS FOR FORMING FINE PATTERNS OF A SEMICONDUCTOR DEVICE Public/Granted day:2016-04-07
Information query
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