Invention Grant
US09397023B2 Integration of heat spreader for beol thermal management 有权
整流散热器,用于beol热管理

Integration of heat spreader for beol thermal management
Abstract:
A microelectronic device includes a heat spreader layer on an electrode of a component and a metal interconnect on the heat spreader layer. The heat spreader layer is disposed above a top surface of a substrate of the semiconductor device. The heat spreader layer is 100 nanometers to 3 microns thick, has an in-plane thermal conductivity of at least 150 watts/meter-° K, and an electrical resistivity less than 100 micro-ohm-centimeters.
Public/Granted literature
Information query
Patent Agency Ranking
0/0