Invention Grant
- Patent Title: Semiconductor device in a semiconductor substrate and method of manufacturing a semiconductor device in a semiconductor substrate
- Patent Title (中): 半导体衬底中的半导体器件和半导体衬底中的半导体器件的制造方法
-
Application No.: US14813738Application Date: 2015-07-30
-
Publication No.: US09397092B2Publication Date: 2016-07-19
- Inventor: Andreas Meiser , Markus Zundel , Till Schloesser
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Main IPC: H01L27/08
- IPC: H01L27/08 ; H01L49/02 ; H01L21/768 ; H01L29/40 ; H01L27/06 ; H01L21/00
Abstract:
A semiconductor device in a semiconductor substrate includes a trench in a first main surface of the semiconductor substrate. The trench includes a first trench portion extending in a first direction and a second trench portion extending in the first direction. The first trench portion is connected with the second trench portion in a lateral direction. The first trench portion and the second trench portion are arranged one after the other along the first direction. The semiconductor device further includes a trench conductive structure having a conductive material disposed in the first trench portion, and a trench capacitor structure having a capacitor dielectric and a first capacitor electrode disposed in the second trench portion. The first capacitor electrode includes a layer lining a sidewall of the second trench portion.
Public/Granted literature
Information query
IPC分类:
