Invention Grant
- Patent Title: Deep collector vertical bipolar transistor with enhanced gain
- Patent Title (中): 具有增益增益的深集电极垂直双极晶体管
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Application No.: US14944481Application Date: 2015-11-18
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Publication No.: US09397164B2Publication Date: 2016-07-19
- Inventor: Brian E. Hornung , Xiang-Zheng Bo , Amitava Chatterjee , Alwin J. Tsao
- Applicant: Texas Instruments Incorporated
- Applicant Address: US TX Dallas
- Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee Address: US TX Dallas
- Agent Jacqueline J. Garner; Frank D. Cimino
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L27/06
Abstract:
An integrated circuit and method having a deep collector vertical bipolar transistor with a first base tuning diffusion. A MOS transistor has a second base tuning diffusion. The first base tuning diffusion and the second base tuning diffusion are formed using the same implant.
Public/Granted literature
- US20160079364A1 DEEP COLLECTOR VERTICAL BIPOLAR TRANSISTOR WITH ENHANCED GAIN Public/Granted day:2016-03-17
Information query
IPC分类:
