Invention Grant
- Patent Title: Light emitting diode chip having electrode pad
- Patent Title (中): 具有电极垫的发光二极管芯片
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Application No.: US14630273Application Date: 2015-02-24
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Publication No.: US09397264B2Publication Date: 2016-07-19
- Inventor: Ye Seul Kim , Kyoung Wan Kim , Yeo Jin Yoon , Sang Hyun Oh , Keum Ju Lee , Jin Woong Lee , Da Yeon Jeong , Sang Won Woo
- Applicant: Seoul Viosys Co., Ltd.
- Applicant Address: KR Ansan-Si
- Assignee: SEOUL VIOSYS CO., LTD.
- Current Assignee: SEOUL VIOSYS CO., LTD.
- Current Assignee Address: KR Ansan-Si
- Agency: Perkins Coie LLP
- Priority: KR10-2010-0114747 20101118; KR10-2010-0114748 20101118
- Main IPC: H01L33/38
- IPC: H01L33/38 ; H01L33/10 ; H01L33/40 ; H01L33/44 ; H01L33/60 ; H01L33/36 ; H01L33/42 ; H01L33/46 ; H01L33/00 ; H01L33/20

Abstract:
Disclosed herein in an LED chip including electrode pads. The LED chip includes a semiconductor stack including a first conductive type semiconductor layer, a second conductive type semiconductor layer on the first conductive type semiconductor layer, and an active layer interposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, a first electrode pad located on the second conductive type semiconductor layer opposite to the second conductive type semiconductor layer; a first electrode extension extending from the first electrode pad and connected to the first conductive type semiconductor layer; a second electrode pad electrically connected to the second conductive type semiconductor layer; and an insulation layer interposed between the first electrode pad and the second conductive type semiconductor layer. The LED chip includes the first electrode pad on the second conductive type semiconductor layer, thereby increasing a light emitting area.
Public/Granted literature
- US20150236210A1 LIGHT EMITTING DIODE CHIP HAVING ELECTRODE PAD Public/Granted day:2015-08-20
Information query
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