发明授权
- 专利标题： Semiconductor device
- 专利标题（中）： 半导体器件
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申请号： US13980997申请日： 2011-06-09
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公开(公告)号： US09401319B2公开(公告)日： 2016-07-26
- 发明人: Takuya Oga , Kazuyasu Sakamoto , Tsuyoshi Sugihara , Masaki Kato , Daisuke Nakashima , Tsuyoshi Jida , Gen Tada
- 申请人： Takuya Oga , Kazuyasu Sakamoto , Tsuyoshi Sugihara , Masaki Kato , Daisuke Nakashima , Tsuyoshi Jida , Gen Tada
- 申请人地址： JP Tokyo
- 专利权人： Mitsubishi Electric Corporation
- 当前专利权人： Mitsubishi Electric Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： Sughrue Mion, PLLC
- 国际申请： PCT/JP2011/063246 WO 20110609
- 国际公布： WO2012/169044 WO 20121213
- 主分类号： H01L23/48
- IPC分类号： H01L23/48 ; H01L23/495 ; H01L23/00 ; H01L23/31 ; H01L25/11
摘要：
A semiconductor device is provided, in which a first lead (11) is joined with the bottom electrode (23) of a MOS-FET (21) with first solder (51), the top electrode (22) of the MOS-FET is joined with an internal lead (31) with second solder (52), the internal lead is joined with a projection (61) of a second lead with third solder (53), and the first lead, second lead, MOS-FET and internal lead are integrally molded using sealing resin (41), wherein the first solder and second solder include support members (54) and (55), respectively, located thereinside and positions of the internal lead and MOS-FET are stabilized by self-alignment.
公开/授权文献
- US20130307130A1 SEMICONDUCTOR DEVICE 公开/授权日：2013-11-21
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