Invention Grant
- Patent Title: Cu wiring fabrication method and storage medium
- Patent Title (中): Cu布线制造方法和存储介质
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Application No.: US14701555Application Date: 2015-05-01
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Publication No.: US09406558B2Publication Date: 2016-08-02
- Inventor: Tadahiro Ishizaka , Tatsuo Hirasawa , Takashi Sakuma , Osamu Yokoyama
- Applicant: TOKYO ELECTRON LIMITED
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Nath, Goldberg & Meyer
- Agent Jerald L. Meyer
- Priority: JP2014-102456 20140516
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L21/285
Abstract:
Cu wiring fabrication method for fabricating Cu wiring with respect to substrate having interlayer dielectric film having trench formed thereon, includes: forming barrier film on surface of the trench; forming Ru film on surface of the barrier film by CVD; burying the trench by forming Cu film or Cu alloy film on the Ru film; forming Cu film or Cu alloy film at corners of bottom of the trench while re-sputtering the formed Cu film or Cu alloy film in a condition where first formed Cu film or Cu alloy film re-sputtered by an ion action of the plasma generation gas; and subsequently burying the Cu film or the Cu alloy film in the trench in condition where the Cu film or the Cu alloy film is formed on field portion of the substrate, and reflows in the trench by an ion action of the plasma generation gas.
Public/Granted literature
- US20150332961A1 Cu Wiring Fabrication Method and Storage Medium Public/Granted day:2015-11-19
Information query
IPC分类:
