Invention Grant
- Patent Title: Yield optimization of processor with graphene-based transistors
- Patent Title (中): 具有石墨烯晶体管的处理器的产量优化
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Application No.: US14414452Application Date: 2013-08-15
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Publication No.: US09411922B2Publication Date: 2016-08-09
- Inventor: Miodrag Potkonjak , Saro Meguerdichian
- Applicant: EMPIRE TECHNOLOGY DEVELOPMENT LLC
- Applicant Address: US DE Wilmington
- Assignee: EMPIRE TECHNOLOGY DEVELOPMENT LLC
- Current Assignee: EMPIRE TECHNOLOGY DEVELOPMENT LLC
- Current Assignee Address: US DE Wilmington
- Agency: Ren-Sheng International
- International Application: PCT/US2013/055024 WO 20130815
- International Announcement: WO2015/023276 WO 20150219
- Main IPC: G06F17/50
- IPC: G06F17/50 ; H01L29/16 ; H01L29/66 ; H01L27/02

Abstract:
Techniques described herein generally include methods and systems related to the selection of a combination of graphene and non-graphene transistors in an IC design. To reduce the increase in leakage energy caused by graphene transistors, selected non-graphene transistors may be replaced with graphene transistors in the IC design while other non-graphene transistors may be retained in the IC design. To limit the number of graphene transistors in the IC design, graphene transistors may replace non-graphene transistors primarily at locations in the IC design where significant delay benefit can be realized.
Public/Granted literature
- US20150370943A1 YIELD OPTIMIZATION OF PROCESSOR WITH GRAPHENE-BASED TRANSISTORS Public/Granted day:2015-12-24
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