Invention Grant
US09412971B2 Encapsulation structure for an optoelectronic component and method for encapsulating an optoelectronic component 有权
用于光电子部件的封装结构和用于封装光电子部件的方法

  • Patent Title: Encapsulation structure for an optoelectronic component and method for encapsulating an optoelectronic component
  • Patent Title (中): 用于光电子部件的封装结构和用于封装光电子部件的方法
  • Application No.: US14232632
    Application Date: 2012-07-05
  • Publication No.: US09412971B2
    Publication Date: 2016-08-09
  • Inventor: Thilo Reusch
  • Applicant: Thilo Reusch
  • Applicant Address: DE Regensburg
  • Assignee: OSRAM OLED GMBH
  • Current Assignee: OSRAM OLED GMBH
  • Current Assignee Address: DE Regensburg
  • Agency: Viering, Jentschura & Partner mbB
  • Priority: DE102011079129 20110714
  • International Application: PCT/EP2012/063127 WO 20120705
  • International Announcement: WO2013/007592 WO 20130117
  • Main IPC: H01L51/52
  • IPC: H01L51/52 H05B33/04 H01L51/44
Encapsulation structure for an optoelectronic component and method for encapsulating an optoelectronic component
Abstract:
An encapsulation structure for an optoelectronic component may include: a barrier thin-film layer for protecting an optoelectronic component against chemical impurities; a cover layer applied above the barrier thin-film layer and serving for protecting the barrier thin-film layer against mechanical damage; and an intermediate layer applied on the barrier thin-film layer between barrier thin-film layer and cover layer and including a curable material designed such that when the non-cured intermediate layer is applied to the barrier thin-film layer, particle impurities at the surface of the barrier thin-film layer are enclosed by the intermediate layer and the applied intermediate layer has a substantially planar surface, and that after the intermediate layer has been cured, mechanical loads on the barrier thin-film layer as a result of particle impurities during the application of the cover layer are reduced by the intermediate layer.
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