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    Encapsulation structure for an optoelectronic component and method for encapsulating an optoelectronic component
    2.
    发明授权
    Encapsulation structure for an optoelectronic component and method for encapsulating an optoelectronic component 有权
    用于光电子部件的封装结构和用于封装光电子部件的方法

    公开(公告)号：US09412971B2

    公开(公告)日：2016-08-09

    申请号：US14232632

    申请日：2012-07-05

    申请人： Thilo Reusch

    发明人： Thilo Reusch

    IPC分类号： H01L51/52 ,  H05B33/04 ,  H01L51/44

    CPC分类号： H01L51/5256 ,  H01L51/448 ,  H01L51/5253 ,  H05B33/04

    摘要： An encapsulation structure for an optoelectronic component may include: a barrier thin-film layer for protecting an optoelectronic component against chemical impurities; a cover layer applied above the barrier thin-film layer and serving for protecting the barrier thin-film layer against mechanical damage; and an intermediate layer applied on the barrier thin-film layer between barrier thin-film layer and cover layer and including a curable material designed such that when the non-cured intermediate layer is applied to the barrier thin-film layer, particle impurities at the surface of the barrier thin-film layer are enclosed by the intermediate layer and the applied intermediate layer has a substantially planar surface, and that after the intermediate layer has been cured, mechanical loads on the barrier thin-film layer as a result of particle impurities during the application of the cover layer are reduced by the intermediate layer.

    摘要翻译： 用于光电子部件的封装结构可以包括：用于保护光电子部件免受化学杂质的阻挡薄膜层; 覆盖层，其被施加在阻挡薄膜层上方，用于保护阻挡薄膜层免受机械损伤; 以及施加在阻挡薄膜层和覆盖层之间的阻挡薄膜层上的中间层，并且包括设计成使得当将未固化的中间层施加到阻挡薄膜层时的可固化材料， 阻挡薄膜层的表面被中间层包围，所施加的中间层具有基本平坦的表面，并且在中间层固化之后，由于颗粒杂质导致阻挡薄膜层上的机械载荷 在覆盖层的应用期间，中间层被还原。

    ENCAPSULATION STRUCTURE FOR AN OPTOELECTRONIC COMPONENT AND METHOD FOR ENCAPSULATING AN OPTOELECTRONIC COMPONENT
    4.
    发明申请
    ENCAPSULATION STRUCTURE FOR AN OPTOELECTRONIC COMPONENT AND METHOD FOR ENCAPSULATING AN OPTOELECTRONIC COMPONENT 有权
    光电组件的封装结构和封装光电元件的方法

    公开(公告)号：US20140210112A1

    公开(公告)日：2014-07-31

    申请号：US14232632

    申请日：2012-07-05

    申请人： Thilo Reusch

    发明人： Thilo Reusch

    IPC分类号： H01L51/52 ,  H01L51/44

    CPC分类号： H01L51/5256 ,  H01L51/448 ,  H01L51/5253 ,  H05B33/04

    摘要： An encapsulation structure for an optoelectronic component may include: a barrier thin-film layer for protecting an optoelectronic component against chemical impurities; a cover layer applied above the barrier thin-film layer and serving for protecting the barrier thin-film layer against mechanical damage; and an intermediate layer applied on the barrier thin-film layer between barrier thin-film layer and cover layer and including a curable material designed such that when the non-cured intermediate layer is applied to the barrier thin-film layer, particle impurities at the surface of the barrier thin-film layer are enclosed by the intermediate layer and the applied intermediate layer has a substantially planar surface, and that after the intermediate layer has been cured, mechanical loads on the barrier thin-film layer as a result of particle impurities during the application of the cover layer are reduced by the intermediate layer.

    摘要翻译： 用于光电子部件的封装结构可以包括：用于保护光电子部件免受化学杂质的阻挡薄膜层; 覆盖层，其被施加在阻挡薄膜层上方，用于保护阻挡薄膜层免受机械损伤; 以及施加在阻挡薄膜层和覆盖层之间的阻挡薄膜层上的中间层，并且包括设计成使得当将未固化的中间层施加到阻挡薄膜层时的可固化材料， 阻挡薄膜层的表面被中间层包围，所施加的中间层具有基本平坦的表面，并且在中间层固化之后，由于颗粒杂质导致阻挡薄膜层上的机械载荷 在覆盖层的应用期间，中间层被还原。

    Method for producing an electronic component and electronic component
    5.
    发明申请
    Method for producing an electronic component and electronic component 审中-公开
    电子部件和电子部件的制造方法

    公开(公告)号：US20130292655A1

    公开(公告)日：2013-11-07

    申请号：US13823921

    申请日：2011-07-28

    申请人： Dirk Becker ,  Erwin Lang ,  Thilo Reusch

    发明人： Dirk Becker ,  Erwin Lang ,  Thilo Reusch

    IPC分类号： H01L51/56 ,  H01L51/52

    摘要： A method for producing an electronic component may include: applying an electrode growth layer on or above a layer structure by means of an atomic layer deposition method; and applying an electrode on the electrode growth layer, wherein the electrode growth layer is applied with a layer thickness in a range of approximately 1.5 nm to approximately 28 nm.

    摘要翻译： 电子部件的制造方法可以包括：通过原子层沉积法在层结构上或上方施加电极生长层; 以及在所述电极生长层上施加电极，其中所述电极生长层的厚度在约1.5nm至约28nm的范围内。

    Electronic Component and Electrical Contact
    9.
    发明申请
    Electronic Component and Electrical Contact 有权
    电子部件和电气接触

    公开(公告)号：US20120175668A1

    公开(公告)日：2012-07-12

    申请号：US13387690

    申请日：2010-07-15

    申请人： Dirk Becker ,  Thomas Dobbertin ,  Thilo Reusch ,  Erwin Lang

    发明人： Dirk Becker ,  Thomas Dobbertin ,  Thilo Reusch ,  Erwin Lang

    IPC分类号： H01L33/42 ,  H01L29/41

    CPC分类号： H01L51/5203 ,  H01L2251/558

    摘要： An electronic component (100), which comprises a substrate (1), at least one first electrode (3) arranged on the substrate (3) and a growth layer (7) on the side of the electrode (3) remote from the substrate (7), wherein the electrode (7) arranged on the growth layer (3) comprises a metal layer (9) with a thickness of less than or equal to 30 nm and the growth layer (7) has a thickness which is less than or equal to 10 nm. An electrical contact is also disclosed.

    摘要翻译： 一种电子部件（100），其包括基板（1），布置在所述基板（3）上的至少一个第一电极（3）和远离所述基板的所述电极（3）侧的生长层（7） （7），其中布置在生长层（3）上的电极（7）包括厚度小于或等于30nm的金属层（9），并且生长层（7）的厚度小于 或等于10nm。 还公开了电接触。

    Electronic component and electrical contact
    10.
    发明授权
    Electronic component and electrical contact 有权
    电子部件和电气接触

    公开(公告)号：US09059423B2

    公开(公告)日：2015-06-16

    申请号：US13387690

    申请日：2010-07-15

    申请人： Dirk Becker ,  Thomas Dobbertin ,  Thilo Reusch ,  Erwin Lang

    发明人： Dirk Becker ,  Thomas Dobbertin ,  Thilo Reusch ,  Erwin Lang

    IPC分类号： H01L33/00 ,  H01L51/52

    CPC分类号： H01L51/5203 ,  H01L2251/558

    摘要： An electronic component (100), which comprises a substrate (1), at least one first electrode (3) arranged on the substrate (3) and a growth layer (7) on the side of the electrode (3) remote from the substrate (7), wherein the electrode (7) arranged on the growth layer (3) comprises a metal layer (9) with a thickness of less than or equal to 30 nm and the growth layer (7) has a thickness which is less than or equal to 10 nm. An electrical contact is also disclosed.

    摘要翻译： 一种电子部件（100），其包括基板（1），布置在所述基板（3）上的至少一个第一电极（3）和远离所述基板的所述电极（3）侧的生长层（7） （7），其中布置在生长层（3）上的电极（7）包括厚度小于或等于30nm的金属层（9），并且生长层（7）的厚度小于 或等于10nm。 还公开了电接触。