发明授权
- 专利标题: Apparatus for producing polycrystalline silicon and method for producing polycrystalline silicon
- 专利标题(中): 多晶硅制造装置及多晶硅制造方法
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申请号: US13979789申请日: 2011-09-20
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公开(公告)号: US09416444B2公开(公告)日: 2016-08-16
- 发明人: Yasushi Kurosawa , Shigeyoshi Netsu
- 申请人: Yasushi Kurosawa , Shigeyoshi Netsu
- 申请人地址: JP Tokyo
- 专利权人: Shin-Etsu Chemical Co., Ltd.
- 当前专利权人: Shin-Etsu Chemical Co., Ltd.
- 当前专利权人地址: JP Tokyo
- 代理机构: Oblon, McClelland, Maier & Neustadt, L.L.P.
- 优先权: JP2011-010493 20110121
- 国际申请: PCT/JP2011/005283 WO 20110920
- 国际公布: WO2012/098598 WO 20120726
- 主分类号: C23C16/00
- IPC分类号: C23C16/00 ; C23C16/24 ; C01B33/035 ; C23C16/455
摘要:
Raw material gas supply nozzles are arranged within a virtual concentric circle having its center at the center of a disk-like base plate (having an area half as large as an area of the base plate). Raw material gas is ejected at a flow velocity of 150 m/sec or more into a bell jar from the gas supply nozzles. In addition to one gas supply nozzle provided in a center portion of the base plate, three gas supply nozzles can be arranged at the vertex positions of a regular triangle inscribed in a circumscribed circle having its center at the gas supply nozzle in the center portion. With the gas supply nozzles so arranged, a smooth circulating flow is formed within a reactor.
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